Method of modifying the development of photoresists

Details Method of modifying the development of photoresists Method of modifying the development of photoresists

G - Physics

03

C

96/269

G03C 5/00 (2006.01) G03F 7/022 (2006.01) G03F 7/30 (2006.01) G03F 7/38 (2006.01)

Patent

CA 1111699

METHOD OF MODIFYING THE DEVELOPMENT PROFILE OF PHOTORESISTS Abstract of the Disclosure The cross-sectional profile which is produced upon development of a layer of alkali soluble resin-diazo ketone photoresist is modified by treating the layer with a solvent or solvent mixture which is different from but miscible with the solvent or solvent mixture used to form the resist layer. The treating solvent is believed to dilute the resist solvent in a surface layer portion of the resist thereby modifying the alkaline developer solubility of this portion. Undercut resist profiles may be obtained by this method with normal optical exposure of the resist.

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