C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
18/1120, 204/167
C04B 35/00 (2006.01) B22F 3/02 (2006.01) C01B 19/00 (2006.01) C23C 14/34 (2006.01) H01L 31/0296 (2006.01)
Patent
CA 1110421
ABSTRACT OF THE DISCLOSURE Embodiments of a method are disclosed for producing large size cadmium mercury telluride (CMT) sputtering targets of a homogeneous composition. Sputter- ing targets of CMT having a general formula CdxHg1-xTe wherein x has values in the range of about 0.14 to 0.60 are prepared by compacting finely divided CMT of a particle size smaller than 150 µ in a die into a coherent compact having a density of at least 97% theoretical density. CMT with an x value of about 0.14 to about 0.20 preferably is compacted at a die preheat temperature of about 100 to 300°C and at a compacting pressure of at least about 400 MPa. CMT having an x value of about 0.20 to about 0.60 preferably is compacted at a die preheat temperature of about 300°C and a compacting pressure of about 160 to 275 MPa. The die may be evacuated to a pressure of less than about 133 Pa absolute prior to compacting.
316105
Hirsch Horst E.
Smyth Robert W.
Cominco Ltd.
Gowling Lafleur Henderson Llp
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