Method for forming a narrow dimensioned mask opening on a...

Details Method for forming a narrow dimensioned mask opening on a... Method for forming a narrow dimensioned mask opening on a...

H - Electricity

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H01L 21/76 (2006.01) H01L 21/033 (2006.01) H01L 21/311 (2006.01) H01L 21/762 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1120609

METHOD FOR FORMING A NARROW DIMENSIONED MASK OPENING ON A SILICON BODY Abstract A method for forming a narrow, such as a submicrometer, dimensioned mask opening on a silicon body involving forming a first insulator region having substantially a horizontal surface and a substantially vertical surface. A second insulator is applied on both the the horizontal surface and substantially vertical surfaces. The second insulator is composed of a material different from that of the first insulator layer. Reactive ion etching of the second layer removes the horizontal layer and provides a narrow dimensioned second insulator region on the silicon body. The surface of the silicon body is then thermally oxidized. The narrow dimensioned second insulator region is removed to form a narrow dimensioned mask opening. FI9-78-023

336935

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