Thin film strain gage and process therefor

Details Thin film strain gage and process therefor Thin film strain gage and process therefor

G - Physics

01

L

338/27, 73/3, 73

G01L 1/22 (2006.01) C23C 15/00 (1980.01)

Patent

CA 1134163

ABSTRACT OF THE DISCLOSURE A thin film strain gage is deposited on a flexure beam under controlled deposition conditions such that the dielectric parts thereof are normally in a compressive state. During use, when the strain gage is flexed in a manner tending to place parts thereof in tension, the dielectric parts are instead maintained either in compression, which is their more resistant state against mechanical fracture, or only in slight tension. Specifically, the dielectric films are deposited by sputtering with the substrate negatively biased, with the deposition rate and substrate temperature maintained at predetermined levels for enhancing compressive deposition. - 1 -

333029

Affiliated with

Also associated with

Rating

Thin film strain gage and process therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film strain gage and process therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film strain gage and process therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-327405