Reversible optoelectronic semiconductor device

Details Reversible optoelectronic semiconductor device Reversible optoelectronic semiconductor device

G - Physics

02

B

345/17

G02B 6/42 (2006.01) H01L 31/103 (2006.01) H01L 31/109 (2006.01) H01L 31/12 (2006.01) H01L 31/167 (2006.01) H01L 31/173 (2006.01) H04B 10/28 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1070807

ABSTRACT: Electroluminescent or photodetector optoelectronic semiconductor device having a P-N junction and a transparent surface region, for a narrow wavelength range and very low voltage. The surface region is localised in a layer of the same material which is less doped, the depth of the junction is determined as a function of the diffusion length of the minority carriers and these latter are determined as a func- tion of the absorption length. In photodetection the deple- tion zone is limited. Application to transmission by photo- coupling in the two directions. Symmetrical reversible photocouplers.

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