Method of fabrication of electroluminescent and...

Details Method of fabrication of electroluminescent and... Method of fabrication of electroluminescent and...

H - Electricity

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H01L 21/265 (2006.01) H01L 31/0296 (2006.01) H01L 31/103 (2006.01) H01L 31/12 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1138558

Abstract of the Disclosure A layer of thickness xj is formed at the surface of a wafer of p-type ZnTe semiconductor material and compensated so as to provide insulation with high resistivilty. Ions are implanted with sufficient energy to form a trapping region of thickness x1 at the surface of the semiconductor and to form beneath the trapping region an insulating region of thickness x2, with x1 < xj. The diode has high efficiency both for emission of light having well-defined wavelengths and for current generation when subjected to light radiation.

323836

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