Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

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H01L 21/36 (2006.01) H01L 21/32 (2006.01) H01L 21/762 (2006.01) H01L 21/8226 (2006.01) H01L 27/02 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1118532

26.7.78 1 PHN 8870 ABSTRACT "Method of manufacuring a semiconductor device A method of manufacturing LOCOS transistors in which base doping, emitter doping and emitter metallization are provided via the same aperture. Problems at the edge of the sunken oxide are eliminated so that the channel stopper diffusion in the epitaxial layer may be omitted, which presents advantages in particular in I2L.

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