Equipment and method for annealing semiconductors using...

Details Equipment and method for annealing semiconductors using... Equipment and method for annealing semiconductors using...

H - Electricity

01

L

356/163, 327/28

H01L 21/477 (2006.01) C30B 1/02 (2006.01) C30B 33/00 (2006.01) H01L 21/268 (2006.01)

Patent

CA 1166319

ABSTRACT A semiconductor is annealed by equipment which comprises a short-arc type rare gas discharge lamp as a heat source which satisfies the condition, 140 ? P x ? ? 16, where ? (mm) is the distance between an anode and a cathode of the lamp and P is the sealed gas pressure within the lamp (atmospheric pressure) at room temperature (25°C), an optical system for converging emitted light from the gas discharge lamp, a power source unit capable of controlling the emitted light of the gas discharge lamp, and a stage for mounting the semiconductor. With this equipment, the semiconductor crystal is satisfactorily restored from damages incidental to ion implantation and a polycrystalline or amorphous semiconductor is converted into a good single crystal semiconductor.

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