Semiconductor devices having improved low-resistance...

Details Semiconductor devices having improved low-resistance... Semiconductor devices having improved low-resistance...

H - Electricity

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H01L 31/04 (2006.01) H01L 21/443 (2006.01) H01L 29/22 (2006.01) H01L 31/0224 (2006.01)

Patent

CA 1162283

-0- SEMICONDUCTOR DEVICES HAVING IMPROVED LOW-RESISTANCE CONTACTS TO p-TYPE CdTe, AND METHOD OF PREPARATION Abstract There are disclosed a semiconductor device com- prising a layer of polycrystalline p-type CdTe and a variety of metals in low-resistance contact, and a process and pre- ferred etchant for obtaining the contact. A layer comprising tellurium is provided between the metal contact and the layer of p-type CdTe. The surface portion of the CdTe layer adjacent to the tellurium-containing layer is cadmium- deficient, and the grain boundaries of the CdTe layer are preserved intact.

361703

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