Method of forming an improved solder interconnection between...

Details Method of forming an improved solder interconnection between... Method of forming an improved solder interconnection between...

H - Electricity

05

K

356/8

H05K 1/11 (2006.01) H01L 21/60 (2006.01) H01L 23/532 (2006.01) B23K 35/00 (2006.01)

Patent

CA 1139008

METHOD OF FORMING AN IMPROVED SOLDER INTERCONNECTION BETWEEN A SEMICONDUCTOR DEVICE AND A SUPPORTING SUBSTRATE Abstract A ball limiting metallurgy pad structure for a semi- conductor device solder bond interconnection comprises a conductive layer that is adherent to the semicon- ductor device passivating layer, a relatively thick layer of a material that has a high thermal conductivity, a bar- rier layer that protects the high conductivity layer by physically preventing it from interacting or alloying with any subsequent layers, and a layer of a material that is solder wettable.

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