H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/32, 345/62
H01L 27/15 (2006.01) H01S 5/026 (2006.01) H01L 33/00 (2006.01)
Patent
CA 1138561
ABSTRACT OF THE DISCLOSURE A semiconductor laser light emitting element com- prises a semiconductor substrate, a laminate region of semi- conductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein. The first and third semiconductor layers have smaller refractive indices and greater forbidden band gaps than the second semiconductor layer and are opposite in conductivity type to each other. Provided are on the substrate a field effect transistor section having first and second electrodes and a gate electrode disposed between the first and second electrodes, a first device for serving as an optical resonator for emitting light in the lengthwise direction of the p-n junction. A second device formed on one surface of the laminate region for injecting current into the third semiconductor layer, the current injecting device is short-circuited with the first electrode of the field effect transistor section and a third device is formed on the substrate for receiving the current injected from the current injecting device.
346748
Fukuzawa Tadashi
Hirao Motohisa
Nakamura Michiharu
Umeda Jun-Ichi
Yamashita Shigeo
Gowling Lafleur Henderson Llp
Hitachi Ltd.
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