Method of etching a semiconductor device

Details Method of etching a semiconductor device Method of etching a semiconductor device

H - Electricity

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H01L 21/302 (2006.01) H01L 21/311 (2006.01) H01L 21/32 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1097432

PHN. 8837. 8-3-1978. ABSTRACT : A method of manufacturing a semiconductor device in which a surface of a silicon body is provided successively with a silicon oxide layer and silicon nitride layer, after which parts of the surface are exposed and are subjected to an oxidation treatment so as to obtain a sunken oxide pattern and remaining parts of the silicon nitride layer and the underlying silicon oxide layer are then etched away, characterized in that the etching treatment is carried out in circumstances in which silicon nitride is etched more rapidly than silicon oxide and silicon, and silicon nitride is etched approximately as rapidly as silicon. - 11 -

305562

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