Method of producing a semiconductor arrangement

Details Method of producing a semiconductor arrangement Method of producing a semiconductor arrangement

H - Electricity

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356/171

H01L 21/22 (2006.01) H01L 21/00 (2006.01) H01L 21/033 (2006.01) H01L 21/311 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1070028

C A N A D A ABSTRACT A process for producing a semiconductor device in a silicon crystal in which a first part area of the crystal surface is covered with a silicon nitride layer and a second part area adjacent thereto with a silicon dioxide layer, and the crystal is thereafter locally doped using a doping mask produced by means of a photo-lacquer layer covering a part of the silicon dioxide layer and at least a part of the silicon nitride layer. The application of the process to the production of planar and mesa transistors is described. The doping may be effected by diffusion or ion-implantation.

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