Method of manufacturing a gate turn-off thyristor

Details Method of manufacturing a gate turn-off thyristor Method of manufacturing a gate turn-off thyristor

H - Electricity

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H01L 21/22 (2006.01) H01L 29/10 (2006.01) H01L 29/74 (2006.01) H01L 29/744 (2006.01)

Patent

CA 1096052

47,890 METHOD OF MANUFACTURING A GATE TURN-OFF THYRISTOR ABSTRACT OF THE DISCLOSURE This disclosure sets forth a method of manufacturing a gate turn-off (GTO) thyristor which includes the step of altering the lateral electrical resistance of one base region by out diffusion from selected portions of the base region.

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