C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/167
C23C 14/56 (2006.01) C23C 14/34 (2006.01)
Patent
CA 1066663
ABSTRACT A method and apparatus for supplying back- ground gas in a sputtering chamber where there is at least one target of some material comprising at least two elements which are to be sputtered as a compound onto a substrate within the chamber. The target is frame by a metallic shield to confine the sputtering to a forward direction and the background gas needed for maintaining stoichiometry of the sputtering material is injected directly inside of the shield from behind the target along one lengthwise edge thereof so that immediately upon entry into the chamber a substantial portion thereof flows over the target from said one edge. A perforated manifold is disposed the length or the target to release the background gas along the length of the target.
248137
Coulter Systems Corporation
Na
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