Method of making an amorphous silicon dioxide free of metal...

Details Method of making an amorphous silicon dioxide free of metal... Method of making an amorphous silicon dioxide free of metal...

C - Chemistry, Metallurgy

01

B

23/192, 57/22

C01B 33/12 (2006.01) C09K 3/14 (2006.01) H01L 21/306 (2006.01)

Patent

CA 1106143

A B S T R A C T A method of making a metal-ion free silicon dioxide is provided which has a specifically uniform grain size and which is suitable for the mechanical polishing of semiconductor wafers. In the process according to the invention high grade silicon is dissolved in an aqueous solution of an organic amine. The base surplus is buffered by hydrogen ions from an added hydroxybenzene Subsequently, the solution is boiled under reflux for several hours with bubbling of purified air. The precipitated amorphous silicon dioxide is collected, rinsed, and suspended in water for the mechanical polishing of wafers.

281822

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