Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

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356/68

H01L 27/08 (2006.01) H01L 27/07 (2006.01) H01L 27/082 (2006.01) H01L 29/72 (2006.01) H02P 7/00 (2006.01)

Patent

CA 1137230

- 15 - Abstract of the Disclosure A semiconductor device including at least first and second transistors having their respective emitter regions of a first conductivity type formed in a common base layer of a second conductivity type, the semicon- ductor device comprising a first electrode formed on the emitter region of the first transistor, the first electrode extending on that portion of the base layer which surrounds the emitter region of the second tran- sistor, a second electrode formed on the base layer at the opposite side of the emitter region of the first transistor to that side of the base layer where the second transistor is formed, a first semiconductor region formed in the emitter region of the second tran- sistor, the first semiconductor region having the second conductivity type and extending from the major surface of the emitter region of the second transistor to the base layer, an insulation film formed on the first semi- conductor region, a portion of the first semiconductor region being left uncovered with the insulation film, a second semiconductor region formed in the first semicon- ductor region, the second semiconductor region having the first conductivity type and extending from the sur- face of the emitter region of the second transistor to the base layer, and a third electrode formed on the emitter region of the second transistor and the first semiconductor region.

362706

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