Integrated circuit device including both n-channel and...

Details Integrated circuit device including both n-channel and... Integrated circuit device including both n-channel and...

H - Electricity

01

L

356/128

H01L 27/04 (2006.01) H01L 21/00 (2006.01) H01L 27/092 (2006.01) H01L 29/00 (2006.01)

Patent

CA 1057413

Abstract A complementary MOS integrated circuit device, adapted for fabrication with relatively high circuit density, includes relatively fast transistors with a closed gate geometry. Permanently-off gates surround transistors to isolate them from other transistors. A method of making this structure involves self-aligned gate techniques in which the sources and drains are defined as regions which surround the gates and are surrounded by the gates, respectively. -1-

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