Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

H - Electricity

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356/86

H01L 27/04 (2006.01) H01L 21/322 (2006.01) H01L 27/00 (2006.01) H01L 29/00 (2006.01) H01L 29/38 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1057412

ABSTRACT: A high voltage transistor having successively an emitter zone, a highly doped base part, a low doped base part, a low doped collector part and a highly-doped collector part. At a distance from the highly doped base part, a groove is provided which extends down into the highly doped collector part and forms therebelow a channel stopper. The groove may be passivated with neutral, or, if desired, with positively charged glass or oxide while still maintaining a high collector-base breakdown voltage. -20-

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