Semiconductor laser and method of making the same

Details Semiconductor laser and method of making the same Semiconductor laser and method of making the same

H - Electricity

01

S

345/32

H01S 5/223 (2006.01)

Patent

CA 1127282

ABSTRACT In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape, the improvement that said substrate has a terrace part on its principal face, the active layer has two parallel bent parts defining a stripe shape active region facing said current injection region inbetween and said stripe shape active region is disposed with a specified angle to said princi- pal face.

327820

Affiliated with

Also associated with

Rating

Semiconductor laser and method of making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser and method of making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser and method of making the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-662459