H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/50
H01L 33/00 (2006.01)
Patent
CA 1137606
23.3.1979 1 PHE 78-521 ABSTRACT Electroluminescent semiconductor device. An electroluminescent diode with photon recy- cling having an active electroluminescent second semicon- ductor layer present between a first and a third semicon- ductor layer with larger bandwidth and of opposite conduc- tivity type. According to the invention, the active layer has a compensation factor of less than 1/3 and a thickness between 0.1 and 3 absorption lengths of the emitted radia- tion, the first semiconductor layer has a partially re- flecting surface, and the third semiconductor layer has a reflecting surface with two preferably co-planar elec- trodes one of which is connected to the first semiconduc- tor layer via a highly doped contact zone.
325482
Lebailly Jacques
Varon Jacques
Koninklijke Philips Electronics N.v.
Van Steinburg C.e.
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