Method for fabricating non-reflective semiconductor surfaces

Details Method for fabricating non-reflective semiconductor surfaces Method for fabricating non-reflective semiconductor surfaces

H - Electricity

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356/177, 345/22

H01L 21/22 (2006.01) H01L 21/3065 (2006.01) H01L 31/0236 (2006.01)

Patent

CA 1141456

Abstract A differential reactive ion etching process sig- nificantly reduces the reflectivity of silicon. The process takes place in a reactive ion etching tool, typically a diode-configured system employing ambient gases which react with the silicon.

341843

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