Supported diamond

B - Operations – Transporting – 24 – D

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57/16

B24D 3/16 (2006.01) B01J 3/06 (2006.01) B21C 3/02 (2006.01) B23P 5/00 (2006.01) C01B 31/06 (2006.01)

Patent

CA 1139111

ABSTRACT OF THE DISCLOSURE Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond; cubic boron nitride (CBN) ; and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact. The compacts (except for the silicon and silicon carbide variety) are made by high-pressure-high temperature processing generally in the range of 50 Kbar at 1300°C to 85 Kbar at 1750°C. They have application in several fields, for example, wire drawing die blanks, and anvils for high pressure apparatus.

358016

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