B - Operations – Transporting – 24 – D
Patent
B - Operations, Transporting
24
D
57/16
B24D 3/16 (2006.01) B01J 3/06 (2006.01) B21C 3/02 (2006.01) B23P 5/00 (2006.01) C01B 31/06 (2006.01)
Patent
CA 1139111
ABSTRACT OF THE DISCLOSURE Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond; cubic boron nitride (CBN) ; and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact. The compacts (except for the silicon and silicon carbide variety) are made by high-pressure-high temperature processing generally in the range of 50 Kbar at 1300°C to 85 Kbar at 1750°C. They have application in several fields, for example, wire drawing die blanks, and anvils for high pressure apparatus.
358016
Bovenkerk Harold P.
Devries Robert C.
Company General Electric
Eckersley Raymond A.
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