Transistor with emitter of high and low doping

Details Transistor with emitter of high and low doping Transistor with emitter of high and low doping

H - Electricity

01

L

356/71

H01L 21/28 (2006.01) H01L 21/00 (2006.01) H01L 21/225 (2006.01) H01L 29/08 (2006.01)

Patent

CA 1085061

ABSTRACT: A method of manufacturing a semiconductor device having a transistor structure of which the emitter zone comprises a lower-doped region ad- joining the base zone and a more highly-doped re- gion adjoining the surface. According to the in- vention, said more highly-doped part is obtained by the introduction of doping atoms via an undop- ed polycrystalline layer provided on the surface. Preferably a thin silicon nitride or silicon oxide layer is provided between the surface and the poly- crystalline silicon layer prior to providing the latter, - 21 -

277047

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