Semiconductor laser

Details Semiconductor laser Semiconductor laser

H - Electricity

01

S

345/32

H01S 5/223 (2006.01) H01S 5/20 (2006.01) H01S 5/32 (2006.01) H01S 5/323 (2006.01)

Patent

CA 1154852

ABSTRACT OF THE DISCLOSURE In a terraced substrate type semiconductor laser having a semiconductor substrate with a step on its principal face, an active layer with an oblique central region defined between two bends as a stripe-shaped lasing region near the foot of the step, and a clad layer formed on the active layer, a current injection region which is formed by diffusing an impurity, in such a manner that a diffusion front corner penetrates the clad layer and con- tacts the oblique lasing region thereby to form a very narrow current injection path close to the central part of the stripe- shaped lasing region, thereby effectively confining the injected current to the lasing region and hence attaining a very low threshold current and a very high external differential quantum efficiency.

368427

Affiliated with

Also associated with

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-807173