Self-protected semiconductor device

Details Self-protected semiconductor device Self-protected semiconductor device

H - Electricity

01

L

356/53

H01L 29/74 (2006.01) H01L 29/06 (2006.01) H01L 31/111 (2006.01)

Patent

CA 1089111

SELF-PROTECTED SEMICONDUCTOR DEVICE Abstract of the Disclosure A self-protected thyristor structure is provided having an auxiliary gate region peripherally located with respect to the semiconductor device so as to provide for the controlled turn-on of the device at the edge thereof in response to increasing edge current densities at the onset of avalanche breakdown. An auxiliary pilot thyristor is provided substantially surrounding the main thyristor structure and including an annular gate electrode surrounding the auxiliary pilot thyristor structure to insure that turn-on occurs substantially simultaneously throughout the extent of the pilot thyristor region.

276317

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