Thyristor with an imprved di/dt capability

Details Thyristor with an imprved di/dt capability Thyristor with an imprved di/dt capability

H - Electricity

01

L

356/161

H01L 29/08 (2006.01)

Patent

CA 1129119

18 47,979 ABSTRACT OF THE DISCLOSURE A thyristor comprising a body of semiconductor material, said body having major opposed top and bottom surfaces, a first emitter region of a first type conductiv- ity, said first emitter region extending from said bottom surface into said body, a first base region of a second type conductivity adjacent said first emitter region, a first p-n junction between said first emitter and said first base region, a second base region of the first type of conductiv- ity adjacent to said first base region, a second p n junction between said first and said second base region, a portion of said second base region extending to the top surface of said body of semiconductor material, a second emitter region of the second type of conductivity extending from another portion of said top surface of said body of semiconductor material to said second base region, a third p-n junction between said second base region and said second emitter region, an auxiliary emitter region of' said second type conductivity formed in a portion of that portion of said second base region extending to said top surface of said body of semiconductor material, a fourth p-n junction between said auxiliary emitter region, a first electrode ohmically connected to said first emitter 19 47,979 region, a second electrode ohmically connected to said second emitter region, a gate electrode ohmically connected to another portion of said second base region on the top surface of said body and an auxiliary gate electrode ohmically connected to said auxiliary emitter region and said second base region adjacent said auxiliary emitter region and another region disposed within said second base region, said another region being of said first type of conductivity but doped to a higher concentration than said second base region, said another region being spaced apart from said second and third p-n junctions within said second base region and having a portion extending to said top surface of said body of semiconductor material adjacent to said auxiliary emitter and in ohmic electrical contact with said auxiliary gate electrode.

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