H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/172
H01L 21/302 (2006.01) H01L 21/314 (2006.01) H01L 21/316 (2006.01)
Patent
CA 1108310
PROCESS FOR PRODUCING A SEMICONDUCTOR DEVICE ABSTRACT OF THE DISCLOSURE In a process for producing a semiconductor device having a protecting glass film containing an impurity of a first conductivity type, a masking film is formed on at least a portion of a region of a second conductivity type, opposite the first conductivity type, within a semiconductor substrate. The masking film is not etched by an etching agent for the protecting glass film and prevents the impurity issuing out of the protecting glass film from entering into the region when the surface of the protecting glass film is smoothed by heating it. After the heating treatment the masking film is removed to complete the window for an electrode contact.
318377
Nishimoto Keiji
Tanaka Shinpei
Fujitsu Limited
Mcfadden Fincham
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