4. H - Electricity
  5. 01
  6. L

Chuan C. Chang

H - Electricity – 01 – L

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Country: United States Of America

Method of fabricating a semiconductor device

H - Electricity – 01 – L
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Nitrided silicon dioxide layers for semiconductor integrated...

C - Chemistry – Metallurgy – 30 – B
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Semiconductor devices with an ohmic contact to n-type group...

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Profile ID: LFCA-PAI-P-94865

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