Nitrided silicon dioxide layers for semiconductor integrated...

Details Nitrided silicon dioxide layers for semiconductor integrated... Nitrided silicon dioxide layers for semiconductor integrated...

C - Chemistry, Metallurgy

30

B

148/3

C30B 31/06 (2006.01) H01L 21/314 (2006.01) H01L 21/383 (2006.01) H01L 21/76 (2006.01)

Patent

CA 1260364

- 16 - NITRIDED SILICON DIOXIDE LAYERS FOR SEMICONDUCTOR INTEGRATED CIRCUITS Abstract A semiconductor integrated circuit includes a nitrided silicon dioxide layer (32) typically 50 to 400 Angstroms thick located on a semiconductor medium. The nitrided layer is an original silicon dioxide layer (22) that has been nitrided at its top surface, as by rapid (flash) heating in ammonia to about 1250 degrees C, in such a way that the resulting nitrided silicon dioxide layer is essentially a compound layer of silicon nitroxide on silicon dioxide in which the atomic concentration fraction of nitrogen falls from a value greater than 0.13 at the top surface of the compound layer to a value of about 0.13 within 30 Angstroms or less beneath the top surface, and advantageously to values of less than about 0.05 everywhere at distances greater than about 60 Angstroms or less beneath the top surface, except that the nitrogen fraction can rise to as much as about 0.10 in the layer at distances within about 20 Angstroms from the interface of the nitrided layer and the underlying semiconductor medium.

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