4. H - Electricity
  5. 01
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Marvin J. Tabasky

H - Electricity – 01 – L

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Inventor

Country: United States Of America

Junction field effect transistor and method of fabricating

H - Electricity – 01 – L
Patent

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Method of depositing fluorinated silicon nitride

C - Chemistry – Metallurgy – 23 – C
Patent

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Junction field effect transistor and method of fabricating

H - Electricity – 01 – L
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Method of depositing fluorinated silicon nitride

C - Chemistry – Metallurgy – 23 – C
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

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Profile ID: LFCA-PAI-P-1274117

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