4. H - Electricity
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  6. L

Nivo Rovedo

H - Electricity – 01 – L

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Country: United States Of America

Field-effect-transistor with asymmetrical structure

H - Electricity – 01 – L
Patent

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Method for removing protuberances at the surface of a...

H - Electricity – 01 – L
Patent

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Sidewall spacers for cmos circuit stress relief/isolation...

H - Electricity – 01 – L
Patent

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Vertical bipolar transistor

H - Electricity – 01 – L
Patent

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Field-effect-transistor with asymmetrical structure

H - Electricity – 01 – L
Patent

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Profile ID: LFCA-PAI-P-1071619

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