4. H - Electricity
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Tadanori Yamaguchi

H - Electricity – 01 – L

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Continuously variable threshold transistor

H - Electricity – 01 – L
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Memory device

G - Physics – 11 – C
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Metal oxide semiconductor field effect transistor

H - Electricity – 01 – L
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Narrow channel mos devices and method of manufacturing

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Profile ID: LFCA-PAI-P-112617

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