Narrow channel mos devices and method of manufacturing

Details Narrow channel mos devices and method of manufacturing Narrow channel mos devices and method of manufacturing

H - Electricity

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H01L 21/365 (2006.01) H01L 21/32 (2006.01) H01L 21/336 (2006.01) H01L 29/10 (2006.01) H01L 29/423 (2006.01) H01L 29/78 (2006.01) H01L 29/06 (2006.01) H01L 29/08 (2006.01)

Patent

CA 1119733

NARROW CHANNEL MOS DEVICES AND METHOD OF MANUFACTURING ABSTRACT OF DISCLOSURE Improved, high performance MOS transistors are provided by a method that includes providing an oxygen-impermeable mask on a selected region of a semiconductor substrate, oxidizing the unmasked portion of the surface to provide a thick oxide at least partially recessed in the substrate, which layer includes a smoothly tapered beak that extends between the margin of the mash and the underlying silicon surface. and, after removing the mask, implanting a selected impurity in the substrate beneath the selected region to form a thin impurity layer that terminates at a sloped portion of the substrate formed by the oxidation step. -1-

316831

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