Basic cell for integrated circuit gate arrays

H - Electricity – 01 – L

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356/126, 356/30

H01L 27/00 (2006.01) H01L 27/118 (2006.01)

Patent

CA 1187624

ABSTRACT A basic cell for integrated circuit gate arrays comprises four field effect transistors in pairs having complementary polarity. Two complementary transistors, symmetrically located with respect to a central point of the cell, have their gate electrodes connected by a polycrystalline silicon path traversing spaced metal power lines. A second polycrystalline silicon path connects areas on oppo- site sides of a zone defined between the metal power lines. Contacts associated with the transistor electrodes are arranged in groups inside and outside the zone defined between the power lines so as to minimize the cell surface, contacts associated with electrodes not already intercon- nected within the cell being duplicated inside and outside the zone defined between the power lines.

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