Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

H - Electricity

01

L

356/149

H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 21/336 (2006.01) H01L 29/423 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1179787

- 11 - ABSTRACT METHOD OF FABRICATING A SEMICONDUCTOR DEVICE A method for making a MOSFET device (20) in a semiconductor body (10) includes forming source and drain contact electrodes (12.1, 12.2) prior to growth of the gate oxide (10.3) and after formation of a high conductivity surface region. The exposed mutually opposing sidewall edges of each of the contact electrodes (12.1, 12.2) are coated with a sidewall silicon dioxide layer (15. 1, 15.2), and the exposed surface of the semiconductor body (10) between these sidewalls is then etched to separate the high conductivity surface region into the source and drain regions (10.1, 10.2). Formation and etching of the high conductivity region may be omitted by using Schottky barrier or impurity doped material for the contact electrodes (12.1, 12.2).

389861

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1268765