Self-aligned nanotube field effect transistor and method of...

Details Self-aligned nanotube field effect transistor and method of... Self-aligned nanotube field effect transistor and method of...

H - Electricity

01

L

H01L 21/335 (2006.01) B82Y 40/00 (2011.01) H01L 29/772 (2006.01)

Patent

CA 2695715

A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube [104] deposited on a substrate [102], a source and a drain [106-107] formed at a first end and a second end of the carbon-nanotube [104], respectively, and a gate [112] formed substantially over a portion of the carbon-nanotube [104], separated from the carbon-nanotube by a dielectric film [111].

Un dispositif semiconducteur de transistor à effet de champ muni d'un nanotube de carbone comprend un nanotube de carbone ¬104| déposé sur un substrat ¬102|, une source et un drain ¬106-107| formé à une première extrémité et à une deuxième extrémité du nanotube de carbone ¬104|, respectivement, et une barrière ¬112| formée essentiellement sur une partie du nanotube de carbone ¬104|, séparée de celui-ci par une pellicule diélectrique ¬111|.

Affiliated with

Also associated with

Rating

Self-aligned nanotube field effect transistor and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned nanotube field effect transistor and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned nanotube field effect transistor and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1350147