H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/335 (2006.01) B82Y 40/00 (2011.01) H01L 29/772 (2006.01)
Patent
CA 2695715
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube [104] deposited on a substrate [102], a source and a drain [106-107] formed at a first end and a second end of the carbon-nanotube [104], respectively, and a gate [112] formed substantially over a portion of the carbon-nanotube [104], separated from the carbon-nanotube by a dielectric film [111].
Un dispositif semiconducteur de transistor à effet de champ muni d'un nanotube de carbone comprend un nanotube de carbone ¬104| déposé sur un substrat ¬102|, une source et un drain ¬106-107| formé à une première extrémité et à une deuxième extrémité du nanotube de carbone ¬104|, respectivement, et une barrière ¬112| formée essentiellement sur une partie du nanotube de carbone ¬104|, séparée de celui-ci par une pellicule diélectrique ¬111|.
Appenzeller Joerg
Avouris Phaedon
Chan Kevin K.
Collins Philip G.
Martel Richard
International Business Machines Corporation
Wang Peter
LandOfFree
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