Sputter coating collimator with integral reactive gas...

Details Sputter coating collimator with integral reactive gas... Sputter coating collimator with integral reactive gas...

H - Electricity

01

L

H01L 21/203 (2006.01) C23C 14/00 (2006.01) C23C 14/04 (2006.01)

Patent

CA 2156716

A sputter coating apparatus particularly useful for applying sputtered films, particularly reactively produced sputtered films such as titanium nitride, onto semiconductor wafers (16), is provided with a collimator (40) that includes a grid (42) of vanes (44a, 44b) for restricting the paths (32, 34) available for the sputtered material to take from the target (20) toward the wafer (16). A flow of fresh reactive gas is maintained on the surface (18) of the wafer (16) by gas outlets (54) carried by vanes (44a, 44b) of the collimator (40). The outlets (54) are supplied with the gas through passages (50) provided in the vanes (44a, 44b), so that the gas supply does not contribute to the shadowing of the sputtered material from the wafer (16) except in accordance with the intended shadowing for which the collimator (40) is provided.

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