Field-effect-transistor with asymmetrical structure

Details Field-effect-transistor with asymmetrical structure Field-effect-transistor with asymmetrical structure

H - Electricity

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356/149

H01L 29/76 (2006.01) H01L 21/28 (2006.01) H01L 21/336 (2006.01) H01L 29/10 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2011233

FIELD-EFFECT-TRANSISTOR WITH ASYMMETRICAL STRUCTURE ABSTRACT OF THE INVENTION A field effect transistor of asymmetrical structure comprises: a semiconductor substrate of first conductivity type; source and drain regions of second conductivity type disposed in a surface of the substrate and spaced apart by a channel region; and a single, lightly doped extension of the drain region into the channel, the extension being of the second conductivity type and of a lower dopant concentration than the drain region. The transistor can further beneficially comprise a halo region of the first conductivity type in the substrate generally surrounding only the source region.

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