C - Chemistry – Metallurgy – 03 – B
Patent
C - Chemistry, Metallurgy
03
B
49/8
C03B 37/025 (2006.01) C03B 37/018 (2006.01)
Patent
CA 1157654
PHD 79076 10 ABSTRACT: Doped silica glass is applied by means of reactive deposition from the gas phase by the action of a non-isothermal plasma on the inside of a quartz glass tube. The coated tube is collapsed and the preform thus obtained is drawn into an optical fiber. During the deposition procedure the tube inside dia- meter between 6 and 30 mm must satisfy the formula Image wherein M is the quantity of doped quartz glass in g, which is deposited per minute and AI has the value 1.42.10-4 g/min and AII the value 6.63 - 10-5 g/min. At the end of the deposition, prior to collapsing the inside diameter must satisfy the equation: Image AII having the value 6.63.10-5 g/min.
355931
N.v. Philips Gloeilampenfabrieken
Van Steinburg C.e.
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