Semiconductor device and method of its manufacture

Details Semiconductor device and method of its manufacture Semiconductor device and method of its manufacture

H - Electricity

01

L

H01L 21/18 (2006.01) C30B 25/18 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2612807

Affords a semiconductor device manufacturing method, whereby semiconductor devices having superior characteristics are manufactured with high yield. The semiconductor device manufacturing methods includes: a step of preparing a GaN substrate (10) having a ratio S t / S, of collective area (S t cm2) of the inversion domains (10t) to total area (Scm2) of the principal face 10m of the GaN substrate (10), of no more than 0.5, with the density along the (0001) Ga face, being the principal face (10m) of the GaN substrate (10), of inversion domains (10t) whose surface area where the polarity in the [0001] direction is inverted with respect to the matrix 10s is 1 µm2 or more being D cm-2; and a step of growing on the principal face (10m) of the GaN substrate (10) an at least single-lamina semiconductor layer (20) to form a semiconductor devices (40) in which the product S c × D of the area & of the principal faces (40m) of the semiconductor devices (40) and the density D of the inversion domains (10t) is made less than 2.3

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