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Makoto Kiyama

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Country: Japan

Epitaxial substrate and semiconductor element

H - Electricity – 01 – L
Patent

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Group iii nitride semiconductor device and epitaxial substrate

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Group iii nitride semiconductor device and epitaxial substrate

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Patent

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Group iii nitride semiconductor device and epitaxial substrate

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Patent

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High electron mobility transistor, field-effect transistor,...

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Profile ID: LFCA-PAI-P-1504741

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