G - Physics – 11 – B
Patent
G - Physics
11
B
G11B 13/04 (2006.01) G11B 11/105 (2006.01)
Patent
CA 2069056
A magneto-optical storage device having a configuration wherein a first AlN film, a Pt/Co multi-layer film formed by alternately depositing Pt and Co, a second AlN film, and an Al reflective film are successively laminated on a substrate in this order. Assuming that respectively the thickness of the first AlN film is .delta.AlN (1); that of the second AlN film is .delta.AlN (2); that of the Pt single layer is .delta.Pt; that of the Co single layer is .delta.Co; and the total thickness of the Pt/Co multi-layer film is .delta.Pt/Co, each thickness of those layers is set to range within: 50 nm .delta.AlN (1) 200 nm; 120 nm .delta.AlN (2) 140 nm; 0.6 nm .delta.Pt 1.0 nm; 0.3 nm .delta.Co 0.6 nm; and 15 nm .delta.Pt/Co 20 nm. In accordance with the above arrangement, it is possible to greatly widen the tolerances of the film thicknesses of the first and second dielectric layers for obtaining a predetermined reflective index as well as a maximum Rerr rotation angle. Consequently, without strictly controlling the film thicknesses of the first and second AlN films, a magneto-optical storage device with stable performance suitable for practical use can be produced easily .
Murakami Yoshiteru
Nakajima Junsaku
Ohta Kenji
Takahashi Akira
G. Ronald Bell & Associates
Sharp Kabushiki Kaisha
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