C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/00 (2006.01) B23F 1/02 (2006.01) C23C 16/00 (2006.01) H01J 37/32 (2006.01) H01L 21/00 (2006.01)
Patent
CA 2333530
A method and apparatus for increasing wafer throughput between cleanings in a semiconductor processing reactor (20) includes a mechanism (58) for exchanging any one of or combination of an electrode (32), a dispersion head (42), and related chamber walls (22) and insulation and/or other collecting surfaces or elements with replacement components without having to open the reaction chamber (24) to atmospheric pressure and thus, while maintaining the reaction chamber (24) at about the operating pressure or vacuum.
Procédé et système pour augmenter leur rendement d'une tranche entre des nettoyages effectués dans un réacteur de traitement de semi-conducteurs (20). Le système comprend un mécanisme (58) qui permet de remplacer avec des pièces de rechange n'importe quelle électrode (32) ou combinaison d'électrodes, une tête de dispersion (42), des murs frontaux associés (22) ou des surfaces d'isolement et/ou autres surfaces ou éléments de collecte, sans nécessité d'ouvrir la chambre de réaction (24) à la pression atmosphérique, cela, tout en maintenant dans la chambre de réaction (24) quasiment la pression de fonctionnement ou vide de régime.
Cofer Alferd
Deornellas Stephen P.
Gowling Lafleur Henderson Llp
Tegal Corporation
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