Silicon carbide substrate and method of manufacturing...

Details Silicon carbide substrate and method of manufacturing... Silicon carbide substrate and method of manufacturing...

H - Electricity

01

L

H01L 21/02 (2006.01) C30B 29/36 (2006.01)

Patent

CA 2748020

A SiC substrate includes a first orientation flat (12) parallel to the <11-20> direction, and a second orientation flat (13) being in a direction intersecting the first orientation flat (12) and being different from the first orientation flat (12) in length. An alternative SiC substrate has a rectangular plane shape, and a main surface of the substrate includes a first side parallel to the <11-20> direction, a second side in a direction perpendicular to the first side, and a third side connecting the first side to the second side. A length of the third side projected in a direction in which the first side extends is different from a length of the third side projected in a direction in which the second side extends

La présente invention concerne un substrat SiC équipé d'un premier plat d'orientation (12) parallèle à l'axe <11-20>, et d'un second plat d'orientation (13) qui présente une direction recoupant le premier plat d'orientation (12) et une longueur différente de celle du premier plat d'orientation (12). Un autre substrat SiC présente une forme rectangulaire plane et la surface principale dudit substrat SiC comporte un premier côté parallèle à l'axe <11-20>, un deuxième côté perpendiculaire au premier côté et un troisième côté qui relie les premier et deuxième côtés. La longueur du troisième côté, étendu dans la direction projetée sur le premier côté, diffère de celle du troisième côté étendu dans la direction projetée sur le deuxième côté.

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