C - Chemistry – Metallurgy – 30 – B
Inventor
C - Chemistry, Metallurgy
30
B
Inventor
Country: Japan
Insulated gate bipolar transistor
Lateral junction field-effect transistor
Method for manufacturing silicon carbide substrate and...
Method for manufacturing silicon carbide substrate, silicon...
Method of manufacturing silicon carbide semiconductor device
No associations
LandOfFree
Takeyoshi Masuda does not yet have a rating. At this time, there are no reviews or comments for this inventor.
If you have personal experience with Takeyoshi Masuda, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Takeyoshi Masuda will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-P-1260155