Method of manufacturing silicon carbide semiconductor device

Details Method of manufacturing silicon carbide semiconductor device Method of manufacturing silicon carbide semiconductor device

H - Electricity

01

L

H01L 21/324 (2006.01) H01L 21/265 (2006.01) H01L 21/337 (2006.01) H01L 29/808 (2006.01)

Patent

CA 2667247

Disclosed is a method for manufacturing an SiC semiconductor device, which comprises a step for ion-implanting a dopant into at least a part of the surface of an SiC single crystal (4), a step for forming an Si film (8) on the surface of the SiC single crystal (4) after the ion implantation, and a step for heating the SiC single crystal (4) provided with the Si film (8) to a temperature not lower than the melting temperature of the Si film (8).

L'invention concerne un procédé de fabrication d'un dispositif semi-conducteur SiC qui comporte une étape consistant à implanter des ions d'un dopant dans au moins une partie de la surface d'un monocristal de SiC (4) ; une étape consistant à former un film de Si (8) sur la surface du monocristal de SiC (4) après l'implantation d'ions ; et une étape consistant à chauffer le monocristal SiC (4) comportant le film Si (8) à une température égale ou supérieure à la température de fusion du film Si (8).

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