H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/02 (2006.01) H01L 21/28 (2006.01) H01L 21/336 (2006.01) H01L 29/12 (2006.01) H01L 29/78 (2006.01)
Patent
CA 2759856
A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and connecting the base substrate and SiC substrate to each other by forming an intermediate layer, which is made of carbon that is a conductor, between the base substrate and the SiC substrate.
La présente invention concerne un procédé de fabrication d'un substrat de carbure de silicium, comprenant : un substrat de base (10) comprenant du carbure de silicium et un substrat de SiC (20) comprenant du carbure de silicium monocristallin sont préparés ; et une couche intermédiaire (80) comprenant du carbone, qui est un conducteur, est formée entre le substrat de base (10) et le substrat de SiC (20), joignant ainsi le substrat de base (10) et le substrat de SiC (20) l'un à l'autre.
Fujiwara Shinsuke
Harada Shin
Masuda Takeyoshi
Namikawa Yasuo
Nishiguchi Taro
Marks & Clerk
Sumitomo Electric Industries Ltd.
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