C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/128, 148/36,
C23C 14/28 (2006.01) C04B 41/89 (2006.01) C23C 14/08 (2006.01) C30B 23/02 (2006.01) H01B 12/06 (2006.01) H01L 39/12 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2034932
Abstract of the Disclosure A method, and the resulting structure, of growing a superconducting perovskite thin film of, for example, YBa2Cu3O7-x. A buffer layer of, for example, the perovskite PrBa2Cu3O7-y, is grown on a crystalline (001) substrate under conditions which favor growth of a,b-axis oriented material. Then the YBa2Cu3O7-x layer is deposited on the buffer layer under changed growth conditions that favor growth of c-axis oriented material on the substrate, for example, the substrate temperature is raised by 110°C. However, the buffer layer acts as a template that forces the growth of a,b-axis YBa2Cu3O7-x, which nonetheless shows a superconducting transition temperature near that of c-axis oriented films.
Inam Arun
Ramesh Ramamoorthy
Rogers Charles T. Jr.
Bell Communications Research Inc.
Cassan Maclean
Rutgers The State University Of New Jersey
LandOfFree
Growth of a,b-axis oriented perovskite thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Growth of a,b-axis oriented perovskite thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of a,b-axis oriented perovskite thin films will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1855523