Growth of a,b-axis oriented perovskite thin films

C - Chemistry – Metallurgy – 23 – C

Patent

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117/128, 148/36,

C23C 14/28 (2006.01) C04B 41/89 (2006.01) C23C 14/08 (2006.01) C30B 23/02 (2006.01) H01B 12/06 (2006.01) H01L 39/12 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2034932

Abstract of the Disclosure A method, and the resulting structure, of growing a superconducting perovskite thin film of, for example, YBa2Cu3O7-x. A buffer layer of, for example, the perovskite PrBa2Cu3O7-y, is grown on a crystalline (001) substrate under conditions which favor growth of a,b-axis oriented material. Then the YBa2Cu3O7-x layer is deposited on the buffer layer under changed growth conditions that favor growth of c-axis oriented material on the substrate, for example, the substrate temperature is raised by 110°C. However, the buffer layer acts as a template that forces the growth of a,b-axis YBa2Cu3O7-x, which nonetheless shows a superconducting transition temperature near that of c-axis oriented films.

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